发明名称 |
Isolation layer of semiconductor device and method for fabricating the same |
摘要 |
An isolation layer structure of a semiconductor device includes a substrate; a first insulating layer having a predetermined width and thickness which is formed in a predetermined portion of the substrate; and a second insulating layer which is formed in a predetermined portion of the substrate and which surrounds the first insulating layer.
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申请公布号 |
US5773351(A) |
申请公布日期 |
1998.06.30 |
申请号 |
US19960740146 |
申请日期 |
1996.10.22 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
CHOI, JONG MOON |
分类号 |
H01L21/314;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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