| 发明名称 |
Plasma etching apparatus |
| 摘要 |
The present invention relates to a plasma etching method and a plasma etching apparatus, and more particularly to a plasma etching method and a plasma etching apparatus in which the selection ration is enhanced by improving trench side-wall protecting effect.
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| 申请公布号 |
US5772833(A) |
申请公布日期 |
1998.06.30 |
| 申请号 |
US19940341524 |
申请日期 |
1994.11.17 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
INAZAWA, KOICHIRO;ISHIKAWA, YOSHIO;ASAKAWA, TAKASHI;HIRATSUKA, MASATO;OKAYAMA, NOBUYUKI |
| 分类号 |
H01L21/302;H01J37/32;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/52;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/302 |
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