发明名称 METHOD AND APPARATUS FOR PLASMA PROCESSING.
摘要 A plasma heating apparatus (20) for heating a workpiece (26) includes a chamber (22) of sufficient size to receive a workpiece (26) therein and a source of a reduced gas pressure within the chamber (22) of from about 0.01 to about 100 millitorr. The plasma heating apparatus (20) further includes a plasma source (40) of an enveloping plasma. Optionally, a workpiece voltage may be applied between the workpiece (26) and the wall (24) of the chamber (22), a source (34) of a reactive gas can be provided to backfill the chamber (22), and radiant heaters (25) can be provided to independently heat portions of the workpiece (26). In operation, the plasma source (40) produces a plasma that surrounds and heats the workpiece (26). The plasma and the heating of the workpiece (26) are tailored to achieve controllably uniform or nonuniform heat treatment and/or surface treatment of the workpiece (26). The apparatus (20) can be used to heat treat the workpiece (26) in vacuum, or a reactive gas such as a gaseous source of nitrogen, carbon, or boron can be backfilled into the chamber (22) to alter the surface chemistry of the workpiece (26).
申请公布号 MX9704311(A) 申请公布日期 1998.06.28
申请号 MX19970004311 申请日期 1997.06.11
申请人 HE HOLDINGS, INC. (TAMBIEN LLAMADA) HUGHES;ELECTRONICS;GENERAL MOTORS CORPORATION 发明人 RONGHUA R. WEI;JESSE N. MATOSSIAN;PETER MIKULA;DEBORAH CLARK
分类号 H05H1/46;C23C8/36;C23C16/50;H01J37/32;(IPC1-7):H01J37/32;C23C08/36 主分类号 H05H1/46
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