| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a high numerical aperture by forming a sheet layer that consists of an electrically conductive layer, in at least below the region connected to the pixel electrodes of the semiconductor layer (a polysilicon layer) which is to be the active layer of a thin film transistor(TFT). SOLUTION: After forming the polysilicon layer on the surface of a substrate 1, a patterning is conducted by an etching to form the drain region of the TFT. Then, a land shaped sheet layer 2 is formed on the region. In the polysilicon, which constitutes the layer 2, impurity, for example phosphorus, is doped and the resistance is made lower. Then, a second polysilicon layer, which constitutes the channel region of the TFT, is deposited over the layer 2 and the substrate 1. Then, a patterning is conducted by an etching so as to form a land shaped polysilicon layer 3, which is to be the source, the drain and the channel regions of the TFT, is formed. Having completed the above, thermal oxidation is conducted to form a gate insulating film 4 on the surface of the layer 3.</p> |
