| 摘要 |
PROBLEM TO BE SOLVED: To remove organic residues, by setting a substrate to be processed on the substrate stage of a parallel plane-type plasma ashing device where a distance between electrodes is a specified value, and executing plasma ashing with gas containing oxygen. SOLUTION: A confronted electrode 14 operates as a gas shower head and it can uniformly supply gas containing oxygen to the processed substrate 11. Gas containing oxygen can be supplied from a gas nozzle which is separately provided. The confronting electrode 14 of a substrate stage 12 is stored in a chamber 16 and it is controlled to desired pressure by a vacuum pump and a pressure control means. The inter-electrode distance Gp between the substrate stage 12 and the confronting electrode 14 can be fixed or can finely be adjusted to the range of Gp=10±3mm. The adjusting means of the inter-electrode distance Gp can be a mechanical method by hydraulic and pneumatic fluid cylinder or that by a gear.
|
