COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To obtain a compound semiconductor light emitting element which is suitable for mass production by forming a metallic thin film electrode containing a dopant of the same conductivity as that of a compound semiconductor layer on the semiconductor layer and an electrode which is bought into contact with at least part of a transparent electrode formed on the thin film electrode. SOLUTION: An SiO2 film 11 which becomes an insulating film is partially formed on the surface of a p-type GaN layer 7 containing Mg as a p-type dopant and a metallic thin film 13 containing Mg which is the same p-type dopant as that contained in the GaN layer 7 and an ITO transparent electrode 15 are formed in an area where the SiO2 film 11 is not formed on the surface of the GaN layer 7. Since a P-side electrode 17 for bonding pad which is brought into contact with part of the ITO transparent electrode 15 is formed on the SiO2 film 11, the transparent electrode 15 can be formed easily without sacrificing the ohmic property of the electrode 15 by the action of the metallic thin film electrode 13 containing Mg.