| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface type light emitting device, such as the VCSEL, improved in such a characteristic as the temperature characteristic, etc., by constituting part or whole of a multilayered film mirror of a multilayer compound semiconductor film containing nitrogen. SOLUTION: An n-type GaInNAsP/InPDBR layer 102, an n-type InP clad layer 3 containing a carrier at a concentration of 10<18> cm<-3> and having a thickness of 1.5μm, and a strained quantum well active layer 104 are successively grown on an n-type InP substrate 101 by epitaxial growth. Then a p-type InP clad layer 105 containing a carrier at a concentration of 10<18> cm<-3> and having a thickness of 1.5μm and a p-type GaInNAsP/InPDBR layer 106 are successively formed on the active layer 104. In addition, a p-type InGaAsP contact layer 107 having a thickness of 0.5μm is formed in the layer 106. Finally, ring-like electrodes 109 and 110 having opening diameters of 5μm are respectively formed on the n- and P-type DBE mirrors 102 and 106. Therefore, the DBR mirrors 102 and 106 having high reflectivity and low electrical resistances and thermal resistances can be formed. |
