| 摘要 |
PROBLEM TO BE SOLVED: To reduce the light losses of a large-area semiconductor element and its surface by continuously manufacturing the element by forming a first electrode of a substrate composed an aggregate of carbon fibers, a silicon semiconductor layer on the surface of the substrate, and an oxide layer by oxidizing the surface of the semiconductor layer and bringing the oxide layer into contact with a second electrode. SOLUTION: A first electrode is formed of a substrate 4 composed of an aggregate of carbon fibers 1 and a semiconductor layer 2 is formed on the surface of the substrate 4. Then an oxide layer 3 is formed by oxidizing the surface of the semiconductor layer 2 and at least part of the oxide layer 3 is brought into contact with a second electrode 12. The semiconductor layer 2 is formed by winding the substrate 4 composed of an aggregate of carbon fibers 1 in a roll and continuously feeding the substrate 4 to a semiconductor layer forming device. Therefore, a large-area semiconductor element can be manufactured efficiently and the energy efficiency of the semiconductor element can be improved. |
