| 摘要 |
PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a light emitting element by making the element emit light in an in-plane uniform state by constituting a p-type gallium nitride-based compound semiconductor layer of a p<+> -type GaN layer containing a carrier at a high carrier concentration and a p-type GaAlN layer containing a carrier at a low concentration and the p<+> -type GaN layer as a contact layer which is brought into contact with a positive electrode. SOLUTION: When a positive electrode 8 and a negative electrode 7 are conducted, an electric current spreads in a p<+> -type GaN layer 6 containing a carrier at a high concentration in an in-plane uniform state. When an electric field is impressed in a certain degree upon the layer 6 by increasing the current, the current spread in the layer 6 is also uniformly spread in a p-type Ga1-z Alz N layer 5 (0<=z<1) and can make an Inx Ga1-x N layer 4 (0<x<1) uniformly emit light. The same action occurs in an n-type clad layer and, when the clad layer is divided into an n<+> -type GaN layer 2 and an n-type Ga1-y Aly N layer 3, an electric current uniformly flows to the Inx Ga1-x N layer 4 and the layer 4 uniformly emits light. Therefore, the light emitting output of the layer 4 can be increased. |
