| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device where light emitted from it is least blocked by an electrode and efficiently utilized. SOLUTION: A semiconductor light emitting device is provided with an N electrode 6 arranged so as to be located between the two intersecting sides of an N-type first semiconductor layer 3 and a P electrode 8 arranged so as to be located between the two intersecting sides of an P-type second semiconductor layer 5 formed above the semiconductor layer 3, wherein the N electrode 6 and the P electrode are formed on the same upper side (light emitting plane), the light emitting device is substantially square on a plan view, and moreover the N electrode 6 is square and the P electrode 8 is circular on a plan view. By this setup, a semiconductor light emitting device of this constitution is possessed of a wider light emitting area than a conventional one where both an N electrode and a P electrode are circular. |
