| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitive element and a method of forming the same whereby the effective surface area of the capacitive element is increased, without increasing the element occupied area, to realize capacitance increase per unit area. SOLUTION: On a highly concentrated leading layer 12 formed on the surface of a silicon substrate 11 at an area for forming capacitive element, an upper electrode 15a is formed through a silicon nitride film-made capacitor insulator film 14. The interface between the highly concentrated leading layer 12 and the electrode 15a and that between the leading layer 12 and the capacitor insulator film 14 have irregularities to thereby increase the contact area of the leading layer 12 with the capacitor insulator film 14 and that of the capacitor insulator film 14 with the electrode 15a, thereby increasing the capacitance value of a planar MIS capacitive element per unit area. |
