| 摘要 |
PROBLEM TO BE SOLVED: To provide a boron diffusion process which stably obtains a long life time. SOLUTION: After predeposition, first, a borosilicate glass layer 4 is etched and removed. Subsequently, a boron silicide layer 6 is oxidized at a low temperature of 600 deg.C or lower in an oxygen plasma or ultraviolet radiation ozone atmosphere, removed by etching, and drive-in diffused. Harmful impurities gettered in the boron silicide layer 6 are prevented from being diffused and introduced into a silicon crystal. Consequently, the life time of the silicon crystal after the diffusion of boron is stabilized and 80μs or longer can be obtained.
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