MANUFACTURE OF FERROELECTRIC CAPACITOR AND MANUFACTURE OF FERROELECTRIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To form a high-quality ferroelectric thin film by forming excellent crystal nuclei by depositing a metallic or metal oxide thin film, a metal oxide material, and a ferroelectric material by sputtering, etc. SOLUTION: After an Ir thin film 6 is formed on a silicon oxide film 10 formed on an Si substrate 1, a Ti film 31 is deposited on the Ir thin film 6 at a room temperature. Then a PbTiO3 film 33 is formed as crystal nuclei by depositing PbO 32 on the Ti film 31 by sputtering using a PbO ceramic target at a temperature higher than the crystallization temperature of PbTiO3 and a Pb(Ti, Zr)O3 thin film 17 is deposited on the film 33 by sputtering Pb(Ti, Zr)O3 34. Since the formed PbTiO3 film 33 becomes perovskite crystal nuclei, the particles 17A of the deposited Pb(Ti, Zr)O3 thin film 17 grow in columnar shapes and excellently deposit due to the crystal nuclei of the base film 33.