| 摘要 |
PROBLEM TO BE SOLVED: To obtain an excellent contact property between the lower-layer electrode of a capacitor and a conductive-layer plug on a diffusion layer by laminating a capacitor insulating film, etc., upon the lower-layer electrode containing an Ir layer electrically connected to a buried conductive layer and an IrO2 layer formed on the Ir layer. SOLUTION: After a conductive layer 23 having an Ir/IrO2 /Ir/TiN/Ti structure is formed, a PZT film 24 is formed in a non-heating state. Then a lower-layer electrode 24 and a capacitor insulating film 26 are formed by etching the PZT film 24 and the Ir, IrO2 , and Ir films of the conductive layer 23 and further etching the TiN and Ti films of the layer 23. Since the Ir/IrO2 /Ir/TiN/Ti structure is used as the lower-layer electrode 25, the influence of oxygen can be prevented at the time of forming the PZT film 24. Therefore, the surface of a silicon plug 22 is not oxidized and an excellent contact property can be obtained. |
