SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To secure sufficiently large matching margins between capacitors and contact holes formed on the capacitors by arranging the capacitors in a direction which is deflected from data lines and word lines by prescribed angles. SOLUTION: A plurality of capacitors 206 contained in a memory cell are regularly arranged at prescribed minimum intervals in a direction which is deflected from data lines 204 and word lines 202 by prescribed angles. In addition, pads 210 which are extended in the extending direction of the data lines 204 are formed on active areas 201 through connection holes 209 in order to connect the active areas 201 to the capacitors 206 and the capacitors 206 are connected to the pads 210 through contact holes 205 for capacitor. Therefore, the capacitor 206 become to have sufficient lengths in the directions of the data lines 204 and word lines 202 and sufficiently large matching margins can be secured between the capacitors 206 and contact holes 207 formed on the capacitors 206.