| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming transistors with higher degree of integration. SOLUTION: P-channel transistors 23, 31 for receiving an external and internal power voltages EVCC, IVCC at different levels are disposed in the same well 22 of a substrate to which the higher voltage EVCC is applied. Or N- channel transistors for receiving voltages at different levels are disposed in the same well of the structure to which the lower voltage thereof is applied. This allows many inverters using different power voltage to be laid in the same well, this contributing to the improvement of the integration degree.</p> |
