发明名称 PATTERN FORMING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To make the inclination at both ends in the transverse direction of gate lines, etc., possible to be gentle, even if an etching liquid is deteriorated with the lapse of time in the case of forming the gate lines, etc., of a liquid crystal display device of an active matrix type. SOLUTION: Films for formation of the gate lines, etc., are formed on a glass substrate 21 and the surfaces of the films for formation of the gate lines, etc., are provided with resist patterns 23. Wet etching, washing and drying are repeated three times by using these resist patterns 23 as a mask, by which the gate lines 25, etc., having the widths made gradually narrower from the rear surface side toward the front surface side are formed. Then, even if the etching liquid is deteriorated with the lapse of time, the inclination at both ends 25a in the transverse direction of the gate lines 25, etc., can be made gentle.</p>
申请公布号 JPH10170960(A) 申请公布日期 1998.06.26
申请号 JP19960352560 申请日期 1996.12.16
申请人 CASIO COMPUT CO LTD 发明人 KOSHIZUKA YASUO
分类号 G02F1/1343;G02F1/136;G02F1/1368;G09F9/30;H05K3/06;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/1343
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