| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which is formed into a structure, a wherein semiconductor layers having a grating constant different from that of a substrate are laminated on the substrate and the mobility of electrons is made to enhance without generating the shift of a crystal lattice of the like to make the luminous efficiency of the element superior. SOLUTION: This light-emitting element is formed into a structure, where a luminous layer is formed by laminating an n-type layer 3 and a p-type layer 5, which consist of a gallium nitride compound semiconductor layer, on a substrate 1 and at least either of the layers 3 and 5 consists of a laminated material formed by laminating three layers or more comprising an Aly Ga1-y N (0<y<=0.5) layer (first clad layer 3a) and an Alu Ga1-u N (0<=u<y) layer (second clad layer 3b). |
