| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form the electrodes required for a light emitting element using an insulating substrate on the rear surface of the substrate by forming recessed sections, such as pits, etc., into the insulating substrate and growing a gallium nitride-based compound semiconductor layer which can be used for the rear-surface electrodes in the recessed sections, and then, forming the electrodes on the grown layer from the rear surface. SOLUTION: After an etching mask 2 for forming a pit structure is formed on the surface of a substrate 1, pits 6 having depths of 100μm are formed by etching the substrate 1 carrying the formed pattern by using the mask 2. Then the substrate is surface-treated at about 1,100 deg.C in an H2 atmosphere and a GaN layer 3 is successively grown on the surface of the substrate 1 including the pits 6. Thereafter, the N-type GaN layer which is the outermost layer 3a of the GaN layer 3 grown in the pits 6 is exposed on the rear surface of the substrate 1 by shaving the rear surface of the substrate 1 carrying the grown GaN layer 3 by polishing or etching and a laminated film of Ti and Al is formed on the N-type GaN layer and a laminated film of Ni and Au is formed on a P-type GaN cap layer on the front surface side of the substrate. |
