| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a specific high-quality semiconductor substrate which has no rough surface nor crack, having an excellent cryetallinity with high productivity by providing a process for growing a specific semiconductor layer on a substrate at a growth rate lower than a specific growth rate and another process for growing a specific semiconductor layer on the semiconductor layer at the specific growth rate. SOLUTION: A method for growing nitride-based III-V compound semiconductor layer includes a process for growing a first Bw Alx Gay Inz N layer 2 (where, 0<=w<=1, 0<=y<=1, 0<=x<=1, 0<=z<=1, and w+x+y+z=1) on a substrate by a first vapor growth method at a growth rate of <=4μm/hr and another process for growing a second Bw Alx Gay Inz N layer 3 (0<=w<=1, 0<=x<=1, 0<=y<=1, 0<=z<=1, and w+x+y+z=1) on the layer 2 by a second vapor growth method at a growth rate of 4-200μm/hr. Therefore, the formed first and second Bw Alx Gay Inz N layers 2 and 3 have no rough surface nor crack, but high qualities. |
