| 摘要 |
PROBLEM TO BE SOLVED: To form an accurate pattern by improving the electrical characteristic of a lower electrode by constituting the lower electrode in a three-layer structure containing a Pt layer as the uppermost layer and making the Pt layer thinner and easily etchable. SOLUTION: After an insulating film 32 having a contact hole is formed on a silicon substrate 31 to a prescribed width, the contact hole is filled up with a polysilicon plug 34 formed in the contact hole to the same height with the surface of the insulating film 32. An Ru-film pattern 35a is formed on the surface of the plug 34 and the surface of the film 32 in the periphery of the plug 34 as a first conductive layer and an Ru oxide 36 and a Pt film 37a which is formed as a second conductive layer are successively formed on the pattern 35a. Then side walls 39 composed of an insulating material are formed on both side faces of the laminated body of the Ru-film pattern 35a, Ru oxide 36, and Pt-film pattern 37a and a dielectric film 40 and a second Pt film 41 which is formed as the upper electrode of a capacitor are formed on the entire surface of the laminated body including the side faces 39. Therefore, an accurate pattern can be formed, because the electrical characteristic of the lower electrode of the capacitor can be improved. |
