| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve a response speed by forming extraction electrodes at thin-film transistors(TFTs) via contact holes formed in the interlayer insulating films on these TFTs and forming the interlayer insulating films consisting of the org. resins flattened at the surfaces covering the TFTs and the extraction electrodes. SOLUTION: A silicon oxide film is manufactured as a blocking layer 36 on quartz glass, etc., and the silicon film formed thereon is photoetched to form regions 21 for PTFTs and regions 11 for NTFTs. The silicon oxide films are formed as gate insulating films thereon and the silicon films formed on the upper side thereof are patterned to form gate electrodes 4, 4'. Channel regions 7, 7' are formed under these gate electrodes 4, 4'. Further, aluminum is formed by a sputtering method over the entire part and leads 9, 9' and the contacts 29, 29' are formed by using a photomask. An org. resin 39 for flattening, such as translucent polyimide resin, is applied on the surface.</p> |
