| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the pixel numerical aperture and display quality, and to lower the electric power consumption without increasing the number of production stages, by making the source regions of thin-film transistors(TFTs) to be connected to pixel electrode a metallic reaction layer (silicide) having conductivity and light transparency. SOLUTION: The metallic reaction layer (silicide) 109 resulted by the combination reaction of the part near the surface of a low-resistance semiconductor layer 108 and the metals of a metallic layer consisting of high melting metal materials or their alloys is formed on the lower-resistance semiconductor layer 108. Signal lines 116 and drain electrodes 116p are formed simultaneously with or after the formation of the metallic reaction layer 109. At this time, source regions and drain regions are formed in the low-resistance semiconductor layer 108, by which the TFTs are constituted. The metallic reaction layer (silicide) layer 109 is formed by the combination reaction of the part near the surface of the low-resistance semiconductor layer 108 and the metals of the metallic layer and, therefore, the lower-resistance semiconductor layer 108 and the metallic reaction layer 109 have the sufficient conductivity and light-transmittance.</p> |
