| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a bad influence on other films spread in parts other than an interlayer insulating film is prevented by a method wherein at least two layers of insulating films having a surface layer in which the density or the concentration of a substance constituting a film is remarkably different as compared with that in other parts are applied and formed locally near the surface so as to be piled up. SOLUTION: Impurity ions are implanted into a silicon wafer 1, and a source- drain region 104 is formed by the implanted ions. In succession, a plasma oxide film 105 is applied to, and formed on, the whole face of a gate electrode including a sidewall insulating film 103, on the source-drain region 104 and on the whole face of a substrate including an element-isolation insulating film 15. In succession, a thick interlayer insulating film 106 is formed. Also, a high- density plasma oxide film can be used as the interlayer insulating film 106 in addition to a BPSG film, a PSG film or the like. |
