POWER SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a novel power semiconductor module having a high- reliability head sink which ensures a high thermal conductivity and small thermal expansion difference from an insulation board. SOLUTION: The semiconductor power module includes an insulation board which mounts semiconductor chips and electrodes and is mounted on a heat sink and has such a structure that all the components on the heat sink are sealed such as IGBT. The heat sink comprises Cu or Cu alloy high-thermal conductivity layers 3 and Fe-Ni alloy low-thermal expansion layers 1 alternately laminated amounting to 10 or more layers, pref. 50 or more layers to form a multilayer structure. The high-thermal conduction layers 3 at both sides of each low-thermal expansion layer 1 are connected through through-holes of this layer 1.