SEMICONDUCTOR PROTECTION DEVICES

摘要

The present invention provides a semiconductor protection device in a substrate (200) having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors (152, 154). A well region (210) is located within the substrate having a second type of conductivity with a base region (212) within the well region having a first type of conductivity. A first doped region (214) having the second type of conductivity and a second doped region (216) having a first type of conductivity are located within the well region (210). A third doped region (218) having the second type of conductivity and a fourth doped region (220) having the first type of conductivity are located within the base region (212). A doped region (222) having a first type of conductivity is located within the substrate (200). This doped region (222) is connected to the fourth doped region (212).