| 摘要 |
<p>Synthesis and crystal growth from solutions of compounds of high melting point or vapour pressure comprising two stages: a preliminary saturation of a solvent, which may be one component, with the more volatile component followed by bringing the saturated solution in contact with a suitably orientated seed crystal, raising the temp. slightly and lowering the assembly through an abrupt temp. gradient. The process is pref. carried out in a sealed silica tube contained in a furnace which may be moved from the horizontal to the vertical for the two stages. Typical compounds are Gps III-V semiconductors such as GaAs, GaP.</p> |
