发明名称 |
SPUTTER CATHODE FOR APPLICATION OF RADIOACTIVE MATERIAL |
摘要 |
Making a sputter cathode for applying a radioactive material includes obtaining a wafer composed of a base material and a stable precursor. The base material is transmutable into a material having a relatively short atomic half-life. The wafer is atomically activated to transmute a portion of the stable precursor into a radioactive material. Atomically activating the wafer may include exposing the wafer to a source of thermal neutrons by, for example, placing the wafer in a high-flux nuclear reactor for approximately four weeks. |
申请公布号 |
WO9827246(A1) |
申请公布日期 |
1998.06.25 |
申请号 |
WO1997US23377 |
申请日期 |
1997.12.15 |
申请人 |
IMPLANT SCIENCES CORP. |
发明人 |
ARMINI, ANTHONY, J.;BUNKER, STEPHEN, N. |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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