发明名称 SPUTTER CATHODE FOR APPLICATION OF RADIOACTIVE MATERIAL
摘要 Making a sputter cathode for applying a radioactive material includes obtaining a wafer composed of a base material and a stable precursor. The base material is transmutable into a material having a relatively short atomic half-life. The wafer is atomically activated to transmute a portion of the stable precursor into a radioactive material. Atomically activating the wafer may include exposing the wafer to a source of thermal neutrons by, for example, placing the wafer in a high-flux nuclear reactor for approximately four weeks.
申请公布号 WO9827246(A1) 申请公布日期 1998.06.25
申请号 WO1997US23377 申请日期 1997.12.15
申请人 IMPLANT SCIENCES CORP. 发明人 ARMINI, ANTHONY, J.;BUNKER, STEPHEN, N.
分类号 C23C14/34 主分类号 C23C14/34
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