发明名称 |
MIS TRANSISTOR WITH SELF-ALIGNED METAL GRID AND METHOD FOR MAKING IT |
摘要 |
The invention concerns a MIS transistor with self-aligned metal grid and the method for making it. The method consists in the following steps: a) producing on a substrate (100) a dummy grid in a material capable of resisting to a thermal treatment; b) forming in the substrate self-aligned source and drain regions (118, 120) on the dummy grid; c) laterally coating the dummy grid with an electrically insulating material (124, 126); d) eliminating the dummy grid and forming in its place a permanent grid (136) in a material with weak resistivity. The invention is useful for making ultrahigh frequency circuits. |
申请公布号 |
WO9827582(A1) |
申请公布日期 |
1998.06.25 |
申请号 |
WO1997FR02300 |
申请日期 |
1997.12.15 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;DELEONIBUS, SIMON;MARTIN, FRANCOIS |
发明人 |
DELEONIBUS, SIMON;MARTIN, FRANCOIS |
分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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