| 摘要 |
<p>The invention concerns a MIS transistor with self-aligned metal grid and the method for making it. The method consists in the following steps: a) producing on a substrate (100) a dummy grid in a material capable of resisting to a thermal treatment; b) forming in the substrate self-aligned source and drain regions (118, 120) on the dummy grid; c) laterally coating the dummy grid with an electrically insulating material (124, 126); d) eliminating the dummy grid and forming in its place a permanent grid (136) in a material with weak resistivity. The invention is useful for making ultrahigh frequency circuits.</p> |
