发明名称 |
Vapor deposition apparatus and vapor deposition method |
摘要 |
<p>A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus. <IMAGE></p> |
申请公布号 |
EP0849775(A2) |
申请公布日期 |
1998.06.24 |
申请号 |
EP19970122152 |
申请日期 |
1997.12.16 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
OHASHI, TADASHI;CHAKI, KATUHIRO;XIN, PING;FUJII, TATSUO;IWATA, KATSUYUKI;MITANI, SHINICHI;HONDA, TAKAAKI |
分类号 |
C23C16/44;C23C16/455;C23C16/54;C30B25/14;H01L21/205;H01L21/31;(IPC1-7):H01L21/203;C23C14/24;C30B25/02;C23C14/56;C30B23/02 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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