Improvements in or relating to wafer polishing

摘要

A method for stabilizing the silicon removal rate during chemical-mechanical wafer polishing, the method comprising the steps of circulating a polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10) and agitating the polishing slurry to adjust both the redox potential and pH of the polishing slurry, to dissolve SiOx aggregates in the polishing slurry and to minimize or eliminate the precipitation of SiOx aggregates in the polishing slurry. <IMAGE>