Uncooled quantum well infrared detector

摘要

A quantum structure optical detector has a semiconductor layer stack which includes a low forbidden band energy semiconductor layer (SPG) forming an electromagnetic wave detecting zone between two high forbidden band energy semiconductor layers (SGG1, SGG2), a coupling grating being located on the layer stack to provide good coupling between the detecting zone and the optical wave to be detected. Preferably, the detecting zone is about 1000 Angstrom thick and the (SGG1)/(SPG)/(SGG2) stack comprises GaAsSb/InAsSb/GaAlSb, CdTe/HgCdTe/CdTe or PbS/PbSnSe/PbS.