发明名称 |
Photoconductive detector |
摘要 |
The diode detector architecture has two active layers of photoconductor (D1,D2) with an outer and inner contact layer (C1,C2). Command voltages (V1,V2) are applied to the top and bottom conduction layer. There is a common contact layer (Cc) between the two active layers which has a voltage applied between the command voltage levels. There is a current detector to measure the current difference between the two detector elements. |
申请公布号 |
EP0849798(A1) |
申请公布日期 |
1998.06.24 |
申请号 |
EP19970402894 |
申请日期 |
1997.12.02 |
申请人 |
THOMSON-CSF |
发明人 |
COSTARD, ERIC;BOIS, PHILIPPE;HERNIOU, ERIC;AUDIER, MARCEL |
分类号 |
G01R29/08;H01L21/66;H01L25/04;H01L27/14;H01L27/146;H01L31/09;(IPC1-7):H01L25/04 |
主分类号 |
G01R29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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