| 发明名称 |
MICRO-ELECTRONIC COMPONENT AND PROCESS FOR MAKING IT |
| 摘要 |
<p>PCT No. PCT/DE95/00448 Sec. 371 Date Oct. 17, 1996 Sec. 102(e) Date Oct. 17, 1996 PCT Filed Apr. 4, 1995 PCT Pub. No. WO95/28741 PCT Pub. Date Oct. 26, 1995In its gate region (10), a silicon MOS technology component has a surface structure (6) having edges and/or vertices at which inversion regions, suitable as quantum wires or quantum dots, are preferentially formed when a gate voltage is applied. The surface structure is preferably formed as a silicon pyramid (6) by local molecular beam epitaxy.</p> |
| 申请公布号 |
EP0756761(B1) |
申请公布日期 |
1998.06.24 |
| 申请号 |
EP19950915121 |
申请日期 |
1995.04.04 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
GOSSNER, HARALD;EISELE, IGNAZ;RISCH, LOTHAR;HAMMERL, ERWIN |
| 分类号 |
H01L29/78;B82B1/00;H01L21/20;H01L21/335;H01L29/06;H01L29/10;H01L29/12;H01L29/423;(IPC1-7):H01L29/10;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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