发明名称 |
Method for manufacturing a capacitor using non-conformal dielectric |
摘要 |
A method of forming a capacitor on a semiconductor substrate includes forming a first oxide layer on the semiconductor substrate. A contact hole is then formed in the first oxide layer. A first conductive layer is formed on the first oxide layer and in the contact hole. Then the first conductive layer is etched to form a node structure. A non-conformal oxide is formed on the node structure so that the non-conformal oxide has an overhang portion and a lower portion on the sidewall of the node structure. The non-conformal oxide is isotropically etched to remove the lower portion of the non-conformal oxide and to expose the lower sidewall of the node structure. A second conductive layer is conformally deposited on the non-conformal oxide layer and the lower sidewall of the node structure. The second conductive layer is anisotropically etched, using the overhang portion of the non-conformal oxide as a mask. Then the non-conformal oxide is removed by using a highly selective etching process. The resulting conductive structure serves as a bottom storage node of the capacitor. A dielectric film is formed on the first conductive layer and the second conductive layer. A third conductive layer is formed over the dielectric film to form the top storage node of the capacitor.
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申请公布号 |
US5770510(A) |
申请公布日期 |
1998.06.23 |
申请号 |
US19960760945 |
申请日期 |
1996.12.09 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LIN, YEH-SEN;KOH, CHAO-MING |
分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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