| 摘要 |
The present invention provides a pattern formation method comprising the steps of forming a plating film of a metal insoluble in an etching solution on a substrate, forming a photoresist film on the plating film, forming a photoresist pattern by exposing the photoresist film to light using a predetermined pattern of photo mask and then developing, forming a plating film pattern by using the photoresist pattern as a mask, completely removing the photoresist pattern, etching the substrate by using the plating film pattern as an etching mask, and completely removing the plating film pattern. The present invention has an advantage in that an accurate and fine processing of the lead frame is possible since a plating film pattern is substituted for a photoresist pattern, as an etching mask in the substrate etching step.
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