| 摘要 |
In fabricating a semiconductor laser, an etch stopping layer of a semiconductor material not containing Al has a dopant impurity introduced during growth, by ion-implantation or by diffusion, from a high dopant concentration region located near the etch stopping layer. Since the etch stopping layer does not contain Al, it is less likely that the etch stopping layer will be oxidized during fabrication and a current blocking layer grown on the etch stopping layer has improved crystalline quality. Therefore, the current blocking effect is maintained and the reliability of the device is improved. The dopant impurity causes disordering of the etch stopping layer upon heat treatment, resulting in a larger band gap energy for the etch stopping layer than for an active layer. This prevents laser light originating in the active layer from being absorbed by the etch stopping layer. The characteristics of the laser are improved.
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