发明名称 |
GaN single crystal |
摘要 |
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 mu m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
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申请公布号 |
US5770887(A) |
申请公布日期 |
1998.06.23 |
申请号 |
US19940320263 |
申请日期 |
1994.10.11 |
申请人 |
MITSUBISHI CABLE INDUSTRIES, LTD. |
发明人 |
TADATOMO, KAZUYUKI;WATABE, SHINICHI;OKAGAWA, HIROAKI;HIRAMATSU, KAZUMASA |
分类号 |
C30B25/02;H01L33/00;H01L33/32;(IPC1-7):C30B35/00;H01L29/14 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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