发明名称 |
Semiconductor trench capacitor cell having a buried strap |
摘要 |
A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.
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申请公布号 |
US5770876(A) |
申请公布日期 |
1998.06.23 |
申请号 |
US19960748961 |
申请日期 |
1996.11.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAM, CHUNG HON;LORD, DAVID K.;WRIGHT, JUDITH A. |
分类号 |
H01L21/334;H01L21/8242;H01L29/94;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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