Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section

摘要

A solid-stage imaging device has a region in which there is disposed an unwanted charge drain section 106 for receiving unwanted charges drained from vertical charge transfer sections 102 and a horizontal charge transfer section 103. A P-type well layer 302 is not disposed in the region, and a voltage is applied to an N---type semiconductor substrate 301 in a direction opposite to a voltage applied to the P-type well layer 302 for draining unwanted charges to the N---type semiconductor substrate 301. The unwanted charge drain section can be fabricated without an increase in the number of fabrication steps for manufacturing the solid-state imaging device.