| 摘要 |
A lithography mask and a method for fabricating a mask are disclosed. The method includes the steps of forming a plurality of insulating film patterns on a semiconductor substrate, forming a plurality of doped regions in the semiconductor substrate, forming a conductive layer on the doped regions and the insulating film patterns, and forming a plurality of passages through the semiconductor substrate. The lithography mask includes a semiconductor substrate, a plurality of patterns formed on the semiconductor substrate, a plurality of doped regions formed in the semiconductor substrate between the patterns, a plurality of trenches formed on a lower portion of the semiconductor substrate to expose the doped regions, and a plurality of first holes each penetrating a corresponding one of the doped regions. |
