发明名称 |
SYNTHESIZING METHOD OF DIAMOND |
摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality diamond film having a large area. SOLUTION: In this method, diamond is synthesized on a substrate 11 from a plasma state containing a carbon component. A filament 3 is disposed above the substrate 11 and contains tungsten as a hot electron releasing material. An electrode 4 is disposed apart from the filament 3, and a potential relatively higher than the potential of the substrate 11 is at least temporarily applied on the filament 3, while a potential relatively higher than the potential of the filament 3 is at least temporarily applied on the electrode 4. Thereby, plasma is produced between the filament 3 and the substrate 11 and electrons are made to move from the filament 3 to the electrode 4 to produce plasma between the filament 3 and the electrode 4.
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申请公布号 |
JPH10167888(A) |
申请公布日期 |
1998.06.23 |
申请号 |
JP19960324001 |
申请日期 |
1996.12.04 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
CHIKUNO TAKASHI;IMAI TAKAHIRO;YOSHIDA KENTARO;KUMAZAWA YOSHIAKI |
分类号 |
C30B29/04;C23C16/02;C23C16/26;C23C16/27;C23C16/50;C30B25/10;H01J37/32;(IPC1-7):C30B29/04 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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