| 摘要 |
The storage cell comprises a flip-flop circuit using directly cross-coupled bipolar transistors. A lateral transistor provides the collector load resistance for each bipolar transistor and acts as a controlled current source, the lateral transistors being complementary to the bipolar transistors. Each two adjacent N type strips, contg. inverse transistors are combined to form a common N type strip coupled to a word line for both transistors. A storage cell is selected by a 3-dimensional array of selection lines (X, Y, Z) within a storage plane.
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