发明名称 METHOD FOR PRODUCTION OF ALUMINUM NITRIDE FILM
摘要 FIELD: production of aluminum nitride films. SUBSTANCE: method includes spraying of aluminum in nitrogen atmosphere with the aid of vacuum arc discharge in the form of glow or high-frequency discharge. In application of film on aluminum substrate, prior to initiation of vacuum arc discharge, glow discharge is initiated in nitrogen atmosphere for cleaning of substrate surface and formation of intermediate transition layer of aluminum nitride. EFFECT: provision of additional nitrogen ionization and higher flux of nitrogen ions to substrate. 5 cl, 1 dwge
申请公布号 RU2113537(C1) 申请公布日期 1998.06.20
申请号 RU19960120991 申请日期 1996.10.25
申请人 OMSKIJ GOSUDARSTVENNYJ UNIVERSITET 发明人 BYKOV S.A.;STRUNIN V.I.
分类号 C23C14/06;C23C14/38;C23C14/40 主分类号 C23C14/06
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