| 摘要 |
Coupling between a pair of microstrip lines 3, 4 is improved by reducing the gap g1 between them beyond conventional manufacture limitations. The lines are formed with trapezoidal cross-sections, with the longest major sides uppermost, and the shorter sides in contact with the dielectric substrate 2. The lines are produced by applying a resist 11 onto the surface of the substrate and exposing the resist through a photomask. The resist is then developed to remove unnecessary areas, creating trapezoidal openings for the lines. The lines are then formed by electroplating, evaporation, or sputtering etc in the openings. The remaining resist may then either be removed (figure 1) or be left in place (figure 2), which improves the capacitance between the lines. |
