Semiconductor device including protection means

摘要

A semiconductor device includes a transistor and a protective resistance element. The transistor has first and second impurity regions of a first conductivity type formed on a surface of a substrate and serving as a source and a drain, respectively, and a gate electrode formed on a channel region sandwiched between the first and second impurity regions through a gate insulating film. The protective resistance element has a third impurity region of the first conductivity type formed on the surface of the substrate to be separated from the second impurity region by a predetermined distance, a control electrode formed on the substrate through an insulating film in a surface region sandwiched between the second and third impurity regions, and a well of the first conductivity type formed on the surface of the substrate in the surface region sandwiched between the second and third impurity regions to come into contact with them. The control electrode is connected to the second impurity region, and the well has an impurity concentration lower than those of the second and third impurity regions. <IMAGE> <IMAGE>