| 摘要 |
<p>The device comprises a supporting substrate having a major surface, a column conductor formed on the major surface of the supporting substrate and having a central well region and opposed edges, an emissive structure including a ballast disposed on the column conductor having opposed edges co-extensive with the opposed edges of the column conductor, and a surface emitter having opposed edges being in registration with the central well region of the column conductor and spaced from the opposed edges of the ballast. A field shaper (375, 875) circumscribing the surface emitter and disposed on the ballast has opposed edges which are coextensive with the opposed edges of the ballast. A dielectric layer is disposed on the field shaper and on the opposed edges of the column conductor, the opposed edges of the ballast, and the opposed edges of the field shaper. The row conductor is formed on the dielectric layer. Ballast is made from material having resistivity within range of 100 Ohm per cm to 10K Ohm per cm. Field shaper is made from amorphous silicon.</p> |
