发明名称 |
Improvements in or relating to semiconductor devices |
摘要 |
<p>A CHE programmed memory device (30) avoids forward biasing at an isolated P-well (38) junction with a deep N-well (36) and prevents emitting electrons that may cause voltage buildup across the isolated P-well region (38) by applying a forward bias current (50) or voltage source (40) connected to the deep N-well region (36) for slightly forward biasing the deep N-well region. This maintains the voltage drop of isolated P-well region (38) below the diode turn-on voltage. <IMAGE></p> |
申请公布号 |
EP0848384(A2) |
申请公布日期 |
1998.06.17 |
申请号 |
EP19970121895 |
申请日期 |
1997.12.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KAYA, CETIN |
分类号 |
G11C16/04;G11C16/10;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|