| 摘要 |
A photoelectric conversion device including: a photoelectric conversion portion having a light absorbing layer disposed between charge injection inhibition layers and having a predetermined forbidden band width Eg1, and a carrier multiplication portion including a single or a plurality of inclined band gap layers, the inclined band gap layer including a minimum forbidden band width Eg2 and a maximum forbidden band width Eg3 which are disposed to be in contact with each other to form a hetero junction and having, at the two ends thereof, forbidden band widths Eg4 which holds a relationship Eg2<Eg4<Eg3 in such a manner that the forbidden band width is continuously changed from the two forbidden band widths Eg2 and Eg3 to the forbidden band width Eg4, and the energy step in a conductive band of the hetero junction portion is larger than the energy step in a valence electron band, wherein at least the minimum forbidden band width Eg2 of portions which form the hetero junction is made of a high density p-type semiconductor.
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